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| (R) STPS3L25S LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH MEANS THE HIGHEST EFFICIENCY IN THE APPLICATIONS HIGH POWER SURFACE MOUNT MINIATURE PACKAGE DESCRIPTION Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMC, this device is especially intended for use as an antiparallel diode on synchronous rectification freewheel MOSFET's at the secondary of 3.3V SMPS and DC/DC units. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj dV/dt *: RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage TL = 115C = 0.5 tp = 10 ms Sinusoidal tp= 2 s square F=1kHz tp = 100 s square Parameter Repetitive peak reverse voltage Value 25 10 3 75 1 1 - 65 to + 150 150 10000 Unit V A A A A A C C V/s SMC JEDEC DO-214AB 3A 25 V 150C 0.44 V dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j-a) dTj 1/4 June 1999 - Ed: 3A STPS3L25S THERMAL RESISTANCES Symbol Rth(j-l) Junction to lead Parameter Value 20 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF * Tests Conditions Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% Min. Typ. 15 Max. 90 30 0.49 0.44 0.6 0.58 Unit A mA V VR = VRRM IF = 3 A 0.37 IF = 6 A 0.5 To evaluate the maximum conduction losses use the following equation : P = 0.3 x IF(AV) + 0.047 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 = 0.1 = 0.05 Fig. 2: Average forward current versus ambient temperature (=0.5). IF(av)(A) 3.5 = 0.2 = 0.5 3.0 2.5 =1 Rth(j-a)=Rth(j-l) 2.0 1.5 Rth(j-a)=90C/W T 1.0 0.5 tp T IF(av) (A) 0.5 1.0 1.5 2.0 2.5 =tp/T =tp/T tp Tamb(C) 50 75 100 125 150 0.0 3.0 3.5 4.0 0 25 Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 14 12 10 8 6 4 IM Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-a)/Rth(j-a) 1.0 0.8 Ta=25C 0.6 0.4 = 0.5 Ta=50C = 0.2 Ta=100C t T 2 0 1E-3 0.2 = 0.1 =0.5 t(s) 1E-2 1E-1 1E+0 0.0 1E-2 Single pulse tp(s) 1E+0 1E+1 =tp/T tp 1E-1 1E+2 5E+2 2/4 STPS3L25S Fig. 5: Reverse leakage current versus reverse voltage applied (typical values). IR(mA) 1E+2 Tj=150C Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) 500 F=1MHz Tj=25C 1E+1 1E+0 1E-1 Tj=125C Tj=100C 100 Tj=25C 1E-2 1E-3 VR(V) 0 5 10 15 20 25 VR(V) 10 1 2 5 10 20 30 Fig. 7-1: Forward voltage drop versus forward current (maximum values, high level). IFM(A) 50 Typical values Tj=150C Tj=25C Fig. 7-2: Forward voltage drop versus forward current (maximum values, low level). IFM(A) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 0.2 Typical values Tj=150C 10 Tj=125C Tj=125C Tj=25C Tj=100C Tj=100C 1 0.0 VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VFM(V) 0.3 0.4 0.5 0.6 Fig. 8: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: Rth(j-a) (C/W) 100 90 80 70 60 50 40 30 S(Cu) (cm) 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3/4 STPS3L25S PACKAGE MECHANICAL DATA SMC DIMENSIONS E1 REF. Millimeters Min. Max. 2.45 0.20 3.2 0.41 8.15 7.15 4.70 6.25 1.60 Inches Min. 0.075 0.002 0.114 0.006 0.305 0.260 0.173 0.218 0.030 Max. 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063 D A1 A2 b 1.90 0.05 2.90 0.15 7.75 6.60 4.40 5.55 0.75 E c A1 E E1 C L A2 E2 E2 b D L FOOT PRINT DIMENSIONS (in millimeters) 3.3 2.0 Ordering type STPS3L25S 4.2 2.0 Package SMC Weight 0.243g Base qty 2500 Delivery mode Tape & reel Marking S23 Band indicates cathode Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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